The film thickness is determined by interference between light reflecting from the surface and light traveling through the film. Depending on the relative phase of the rejoining light to the surface reflection, interference can be defined as constructive or destructive. The interference involves both amplitude and phase information. The phase information from Δ is very sensitive to films down to sub-monolayer thickness. Figure 12 compares reflected intensity and ellipsometry for the same series of thin SiO2 layers on Si. There are large variations in Δ, while the reflectance for each film is nearly the same.
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