Since ellipsometry is monolayer sensitive, it is capable of monitoring the growth of each atomic layer. Ellipsometry data are automatically acquired between the ALD cycles using a Woollam M-2000® ellipsometer integrated in situ on an Oxford Instruments FlexAL® or OpAL™ ALD reactor. It is possible to plot a real time graph of any measured parameters such as thickness or refractive index versus the number of ALD cycles.
The photo above shows the FlexAL tool with M-2000 integrated onto the chamber. The
M-2000 is controlled by the Woollam CompleteEASE® software integrated with the Oxford Instruments PC2000® software. The application of in situ ellipsometry to ALD has several distinct advantages. The thickness determined by ellipsometry can confirm the film growth is linear with number of ALD cycles. In the earlygrowth stages the nucleation behavior of the films on various substrates can be investigated. In situ ellipsometry saves a great deal of time when plotting precursor saturation curves without the need to remove the wafer.
For more information please visit the Oxford Instruments website:
www.oxford-instruments.com
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